UV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers
نویسندگان
چکیده
منابع مشابه
Visible Light Emission from Semiconducting Polymer Diodes
We report r t visible i i l light li t emission i i from f Shottky tt diodes i made from f semiconducting se i cting polymers, l ers, confirming i ing the t discovery i by the t Cambridge idge group [Nature [ ature 347,, 539 (1990)]. Our r results lt ( 19 0>3. demonstrate trate that t t light-emitting li t-e itting diodes i can be fabricated f i te by casting ti the t polymer film fil from f so...
متن کاملElectroluminescence of ZnO Nanowire/p-GaN Heterojunction Light Emitting Diodes
This article reports forward and reverse biased emission in vertical ZnO nanowire/p-GaN heterojunction light emitting diodes (LEDs) grown out of solution on Mg-doped p-GaN films. The electroluminescence spectra under forward and reverse bias are distinctly different. Forward bias showed two peaks centered around 390 nm and 585 nm, while reverse bias showed a single peak at 510 nm. Analysis of t...
متن کاملn-ZnO nanorods/p+-Si (111) heterojunction light emitting diodes
In this study, we report the effects of thermal annealing in nitrogen ambient on the optical and electrical properties of zinc oxide (ZnO) nanorod (NR) arrays for the application in light emission diodes (LED). The single-crystalline ZnO NR array was synthesized on p+-Si (111) substrate without seed layer using simple, low-cost, and low-temperature hydrothermal method. The substrate surface was...
متن کاملBroad-spectrum light emission from metal-insulator-silicon tunnel diodes
In addition to Si-band-edge electroluminescence (EL) near 1.1 eV, we observe hotelectron EL in metalinsulator-silicon tunnel diodes that can span a detector-limited range from 0.7 eV to 2.6 eV (1780 nm to 480 nm). The maximum photon energy increases with increasing forward bias. In one implementation, sub-micronsized EL sites appear during forward-bias stress. The number of sites grows linearly...
متن کاملPolarized light emission from GaInN light-emitting diodes embedded with subwavelength aluminum wire-grid polarizers
subwavelength aluminum wire-grid polarizers Ming Ma, David S. Meyaard, Qifeng Shan, Jaehee Cho, E. Fred Schubert, Gi Bum Kim, Min-Ho Kim, and Cheolsoo Sone Future Chips Constellation, Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA Future Chips Constellation, Department of Electrical, Computer, and Systems Engineering, Rensselaer Poly...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Optics Express
سال: 2009
ISSN: 1094-4087
DOI: 10.1364/oe.17.022912